Post-CMOS wafer level growth of carbon nanotubes for low-cost microsensors-a proof of concept
Post-CMOS wafer level growth of carbon nanotubes for low-cost microsensors-a proof of concept
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DOI：
10.1088/0957-4484/21/48/485301
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发表时间：
2010-12-03
期刊：
影响因子：
3.5
通讯作者：
Udrea, Florin
中科院分区：
文献类型：
--
作者：
Santra, Sumita;Ali, Syed Z.;Udrea, Florin
在这里，我们展示了一种新技术，可以在完全处理的 CMOS 基板上以晶圆级的可寻址局部区域生长碳纳米管 (CNT)。通过划线道中的金属轨道连接相邻的微型加热器，使用钨微型加热器（局部生长技术）在晶圆级的高温下生长碳纳米管。电学和光学表征表明碳纳米管是相同的且可重现。我们相信，这种 CNT 与 CMOS 电路的晶圆级集成能够实现 CNT 传感器（例如化学传感器）的低成本大规模生产。
Here we demonstrate a novel technique to grow carbon nanotubes (CNTs) on addressable localized areas, at wafer level, on a fully processed CMOS substrate. The CNTs were grown using tungsten micro-heaters (local growth technique) at elevated temperature on wafer scale by connecting adjacent micro-heaters through metal tracks in the scribe lane. The electrical and optical characterization show that the CNTs are identical and reproducible. We believe this wafer level integration of CNTs with CMOS circuitry enables the low-cost mass production of CNT sensors, such as chemical sensors.