MICROSTRUCTURED GOLD/LANGMUIR-BLODGETT FILM/GOLD TUNNELING JUNCTIONS
MICROSTRUCTURED GOLD/LANGMUIR-BLODGETT FILM/GOLD TUNNELING JUNCTIONS
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微结构金/LANGMUIR-BLODGETT 薄膜/金隧道结
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
K. Klitzing
中科院分区：
文献类型：
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作者：
C. M. Fischer;M. Burghard;S. Roth;K. Klitzing
我们利用一种新的蒸发技术制备了金/朗缪尔-布洛吉特薄膜/金序列的对称三明治结构。作为分子体系，我们使用了一个八取代的钯酞菁和一个茂-3，4，9，10-四羧基二亚胺的衍生物。电子输运测量显示了直接隧穿分子态的隧穿特性。电流/电压曲线对于正负偏压是对称的，证明了顶部和底部电极的两个有机/无机界面具有相同的电子行为。
We prepared symmetric sandwich structures of the sequence gold/Langmuir–Blodgett film/gold by employing a novel evaporation technique. As molecular systems, we used an octasubstituted palladiumphthalocyanine and a perylene‐3,4,9,10‐tetracarboxyldiimide derivative. Electronic transport measurements show a tunneling characteristic which arises from a direct tunneling process through molecular states. The current/voltage curves are symmetric for positive and negative bias proving the identical electronic behavior of the two organic/inorganic interfaces at the top and bottom electrode.