Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature
Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature
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DOI：
10.1063/1.4980024
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发表时间：
2017-04-01
期刊：
影响因子：
1.6
通讯作者：
Kimoto, Tsunenobu
中科院分区：
文献类型：
--
作者：
Kobayashi, Takuma;Suda, Jun;Kimoto, Tsunenobu
我们发现高温氧化后Ar退火可有效降低SiC（0001）MOS结构导带边缘（E-C）附近的界面态密度（D-it）。 D-it 的还原效果可与氮化工艺（一氧化氮 (NO) 中的退火）相媲美，后者已成为 SiC MOS 技术的标准，且不会在界面/氧化物中引入任何外来原子。快速界面态的产生被认为是氮化工艺的一个问题，但在 Ar 退火的情况下得到了抑制。在所提出的方法中，最终的D-it值主要由Ar退火温度而不是初始氧化温度决定。 D-it 值对冷却速度不敏感，这意味着在所提出的方法中不需要快速冷却。 (C) 2017 年作者。除非另有说明，所有文章内容均根据知识共享署名 (CC BY) 许可证 (http://creativecommons.org/licenses/by/4.0/) 获得许可。
We found that post-oxidation Ar annealing at high temperature is effective in reducing the interface state density (D-it) near the conduction band edge (E-C) of SiC (0001) MOS structures. The D-it reduction effect is comparable to that of nitridation process (annealing in nitric oxide (NO)) which has been a standard in SiC MOS technologies, without introducing any foreign atoms into the interface/oxide. The generation of fast interface states, which have been pointed out as a problem of nitridation process, is suppressed in the case of Ar annealing. In the proposed method, the final D-it values are mainly determined by the Ar annealing temperature rather than the initial oxidation temperature. The D-it values are not sensitive to the cooling speed, which means that rapid cooling is not necessary in the proposed method. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).