Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
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等离子体辅助分子束外延生长（010）β-Ga2O3薄膜的Sn掺杂
DOI：
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发表时间：
2020
期刊：
影响因子：
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通讯作者：
J. Speck
中科院分区：
文献类型：
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作者：
Akhil Mauze;Yuewei Zhang;T. Itoh;E. Ahmadi;J. Speck
研究了在分子束外延生长过程中，用常规等离子体辅助分子束外延和金属氧化物催化外延两种方法生长的(010)β-Ga_2O_3中的锡掺杂。虽然在传统的PAMBE中可以在一系列生长条件下获得较高的锡浓度，但低于1019 cm−3的锡掺杂导致了恒定的锡电池温度的不均匀掺杂分布，以及掺杂的逐个运行的变化。在MOCATAXY生长的β-Ga_2O_3中掺入锡可以得到尖锐的掺杂轮廓和较宽的施主浓度范围，范围从3.9 × 10 16 cm−3到2 × 1019 cm−3，室温最大霍尔迁移率为136 cm2/V S，频率为3.9 × 10 16 cm−3。样品在低温下表现出较低的电子迁移率，这表明分子束外延生长的薄膜中存在较高的背景杂质水平，需要在氧化物分子束外延生长环境中进行杂质控制。
Sn doping of (010) β-Ga2O3 grown by conventional plasma-assisted molecular beam epitaxy (PAMBE) and via metal oxide catalyzed epitaxy (MOCATAXY) using a supplied indium flux during molecular beam epitaxy (MBE) growth was investigated. While high Sn concentrations were achievable over a range of growth conditions in conventional PAMBE, Sn doping less than 1019 cm−3 resulted in non-uniform doping profiles for constant Sn cell temperatures, as well as run-to-run variation in doping. Sn doping in MOCATAXY grown β-Ga2O3 allowed for sharp doping profiles and a wide range of donor concentrations from 3.9 × 1016 cm−3 to 2 × 1019 cm−3 and a maximum room temperature Hall mobility of 136 cm2/V s at 3.9 × 1016 cm−3. From temperature-dependent Hall measurements, Sn was found to have a relatively deep donor state at 77 meV below the conduction band edge. The samples showed low electron mobility at cryogenic temperatures, suggesting the existence of high background impurity levels in the MBE grown films and the need for impurity control in the oxide MBE growth environment.