Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide
Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide
复制标题
注入铝和硼的碳化硅电激活的经验模型
DOI：
10.1109/ted.2017.2786086
复制
发表时间：
2018
影响因子：
3.1
通讯作者：
S. Selberherr
中科院分区：
文献类型：
--
作者：
V. Šimonka;A. Hössinger;J. Weinbub;S. Selberherr
半导体中杂质的电特性的精确建模对于通过模拟来强制支持新型半导体器件的开发是必不可少的。一个合适的建模方法，以确定碳化硅中的掺杂剂的激活率是目前不可用的，这限制了工艺模拟的可预测性。为了弥补这一事实，我们提出了一个经验模型，用于各种退火温度和总掺杂浓度的碳化硅中的铝和硼杂质的电激活。根据模型预测讨论了两种受主型掺杂剂的差异，并给出了不同工艺参数下的激活率。该模型被实施到Silvaco的模拟平台胜利过程和评价方面发表的实验结果。
Accurate modeling of the electrical properties of impurities in semiconductors is essential for the mandatory support of the development of novel semiconductor devices by means of simulations. An appropriate modeling approach to determine the activation rate of dopants in silicon carbide is currently not available, which limits the predictability of process simulations. To remedy this fact, we propose an empirical model for the electrical activation of aluminum and boron impurities in silicon carbide for various annealing temperatures and total doping concentrations. The differences of the two acceptor-type dopants are discussed according to the model predictions and the activation ratios for various processing parameters are presented. The model was implemented into Silvaco’s simulation platform Victory Process and evaluated with respect to published experimental findings.