Cross-Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate
Cross-Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate
复制标题
交叉取代促进二维半导体超宽禁带宽度高达 4.5 eV：硫代磷酸镓
DOI：
10.1002/adma.202008761
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发表时间：
2021
影响因子：
29.4
通讯作者：
Wei Zhongming
中科院分区：
文献类型：
--
作者：
Yan Yong;Yang Juehan;Du Juan;Zhang Xiaomei;Liu Yue-Yang;Xia Congxin;Wei Zhongming
探索2D超宽带隙半导体（UWBSs）将有助于开发下一代纳米器件，如深紫外光探测器，单光子发射器和高功率柔性电子器件。然而，新型二维超宽带的理论预测和相应材料的实验实现之间仍然存在差距。交叉取代工艺是构建具有有利母体特性（例如，结构）和更好的物理化学性质（例如，带隙）。在这里，一个简单的情况下，提供了合理的设计和合成的2D UWBS GaPS4采用国家的最先进的GeS2作为一个类似的结构模型。得益于Ga和P对Ge的共取代，GaPS4晶体的光学带隙（少层：3.94 eV，单层：4.50 eV）和上级探测性能显著提高，在日盲紫外区具有高响应率（4.89 A W−1）、高探测率（1.98 × 1012 Jones）和高量子效率（2.39 × 103%）.此外，基于GaPS4的光电探测器表现出偏振敏感的光响应，在254 nm处的线性二向色比为1.85，这得益于其面内结构各向异性。这些结果为2D UWBS各向异性材料的发现和制造提供了一条途径，这些材料成为未来日盲紫外和偏振敏感传感器的有希望的候选材料。
Exploring 2D ultrawide bandgap semiconductors (UWBSs) will be conductive to the development of next‐generation nanodevices, such as deep‐ultraviolet photodetectors, single‐photon emitters, and high‐power flexible electronic devices. However, a gap still remains between the theoretical prediction of novel 2D UWBSs and the experimental realization of the corresponding materials. The cross‐substitution process is an effective way to construct novel semiconductors with the favorable parent characteristics (e.g., structure) and the better physicochemical properties (e.g., bandgap). Herein, a simple case is offered for rational design and syntheses of 2D UWBS GaPS4by employing state‐of‐the‐art GeS2as a similar structural model. Benefiting from the cosubstitution of Ge with lighter Ga and P, the GaPS4crystals exhibit sharply enlarged optical bandgaps (few‐layer: 3.94 eV and monolayer: 4.50 eV) and superior detection performances with high responsivity (4.89 A W−1), high detectivity (1.98 × 1012Jones), and high quantum efficiency (2.39 × 103%) in the solar‐blind ultraviolet region. Moreover, the GaPS4‐based photodetector exhibits polarization‐sensitive photoresponse with a linear dichroic ratio of 1.85 at 254 nm, benefitting from its in‐plane structural anisotropy. These results provide a pathway for the discovery and fabrication of 2D UWBS anisotropic materials, which become promising candidates for future solar‐blind ultraviolet and polarization‐sensitive sensors.