Highly conductive Nb doped BaSnO3 thin films on MgO substrates by pulsed laser deposition
Highly conductive Nb doped BaSnO3 thin films on MgO substrates by pulsed laser deposition
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脉冲激光沉积法在 MgO 基底上制备高导电 Nb 掺杂 BaSnO3 薄膜
DOI：
10.1016/j.jallcom.2016.04.157
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发表时间：
2016-09-25
影响因子：
6.2
通讯作者：
Geng, Lei
中科院分区：
文献类型：
--
作者：
Li, Bing;Liu, Qinzhuang;Geng, Lei
采用脉冲激光沉积技术在（001）取向MgO衬底上外延生长出Ba(NbxSn1-x)O-3 （BNSO）薄膜。利用x射线衍射、x射线光电子能谱、霍尔效应和透射光谱对薄膜的结构、电学和光学性能进行了详细的研究。在x = 0.05时，薄膜的室温电阻率最低为4.81 × 10(-4) ω cm，载流子浓度和迁移率分别为6.59 × 10(20)/cm(3)和19.65 cm(2)/V，具有良好的导电性。所有的BNSO薄膜在可见光范围内具有80%以上的高透光率。带隙E-g随掺杂Nb含量的变化可以用Burstein-Moss效应和八面体倾斜畸变来解释。优异的光学和电学性能表明BNSO薄膜作为透明导电氧化物材料在光电器件中具有潜在的应用前景。(C) 2016 Elsevier B.V.版权所有
Ba(NbxSn1-x)O-3 (BNSO) films were epitaxially grown on (001) oriented MgO substrates with Nb doping content from 0.00 to 0.15 by pulsed laser deposition. The structural, electrical, and optical properties of the films were investigated in detail by x-ray diffraction, x-ray photoelectron spectroscopy, Hall effect and transmittance spectroscopy. The lowest room temperature resistivity value of 4.81 x 10(-4) Omega cm with carrier concentration and mobility of 6.59 x 10(20)/cm(3) and 19.65 cm(2)/V was observed in the film at x = 0.05, indicating an excellent electrical conductivity. All the BNSO films exhibit a high transmittance of more than 80% in the visible range. The variation of band gap E-g with Nb doping content was interpreted by the Burstein-Moss effect and the occurrence of octahedral tilt distorting. Excellent optical and electrical properties suggest that BNSO films have potential applications in the optoelectronic devices as transparent and conducting oxide material. (C) 2016 Elsevier B.V. All rights reserved.