Gate-tunable chiral phonons in low-buckled group-IVA monolayers
Gate-tunable chiral phonons in low-buckled group-IVA monolayers
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低屈曲IVA族单层中的门可调谐手性声子
DOI：
10.1088/1361-648x/abfee5
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发表时间：
2021-01
期刊：
影响因子：
--
通讯作者：
Xiao Li
中科院分区：
文献类型：
--
作者：
Hanyu Wang;Zhichao Zhou;Hao Chen;Chongqun Xia;Lifa Zhang;Xiao Li
抽象的。通过第一性原理计算研究了手性声子在低屈曲基团IVA单分子膜上的电学响应。垂直电场打破了声子布里渊区高对称性±K点处声子模的简并，声子能隙大小与电场强度成正比。在±K处的有隙声子模具有手性，具有相当大的声子圆极化和离散的声子假角动量。声子的手征性对场强的变化具有很强的抵抗力，但随场向的改变而反转。手性声子的电控为手性声子的研究增加了一个新的维度，在声子和谷器件的设计中具有潜在的应用。
Abstract. We investigate the electric response of chiral phonons on the low-buckled group-IVA monolayers by performing first-principles calculations. The vertical electric field breaks the degeneracy of phonon modes at high-symmetry ±K points of the phonon Brillouin zone, and the size of the phononic gap is proportional to the strength of the electric field. The gapped phonon modes at ±K possess chiralities with considerable phonon circular polarizations and discrete phonon pseudoangular momenta. The chiralities of phonons are robust against the variation of the field strength, but reversed by changing the field direction. Electric control of chiral phonons adds a new dimension to the study of chiral phonons, which has potential use in the design of phononic and valley devices.
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通讯作者：
J. Ribeiro-Soares;R. M. Almeida;L. G. Canccado;M. Dresselhaus;A. D. D. F'isica-A.-D.-D.-F'isica-103097743;Universidade Federal de Minas Gerais;B. Horizonte;Mg;30123-970;Brazil.;D. D. F'isica-D.;Universidade Federal de Lavras;Lavras;37200-000;Department of Electrical Engineering;Computer Science;M. I. O. Technology;Cambridge;MA 02139;Usa;D. Physics
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Cahangirov, S.;Topsakal, M.;Ciraci, S.
通讯作者：
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