High-Q nanocavities in semiconductor-based three-dimensional photonic crystals
High-Q nanocavities in semiconductor-based three-dimensional photonic crystals
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半导体三维光子晶体中的高 Q 纳米腔
DOI：
10.1049/el.2017.4542
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发表时间：
2018
影响因子：
1.1
通讯作者：
S. Iwamoto and Y. Arakawa
中科院分区：
文献类型：
--
作者：
S. Takahashi;T. Tajiri;K. Watanabe;Y. Ota;S. Iwamoto and Y. Arakawa
通过增加结构的面内面积，实验证明了三维光子晶体中纳米腔的高品质因子（Q因子）。由GaAs制成的整个结构是通过微操作技术制造的，纳米腔含有发射近红外光的InAs自组装量子点。所获得的Q因子提高到93，000，这是之前报道的三维光子晶体纳米腔的2.4倍。由于这种大的Q因子，成功地观察到了这种腔模式的激光振荡。
The high‐quality factors (Q‐factors) of nanocavities in three‐dimensional photonic crystals were experimentally demonstrated by increasing the in‐plane area of the structure. Entire structures made of GaAs were fabricated by a micro‐manipulation technique, and the nanocavities contained InAs self‐assembled quantum dots that emitted near‐infrared light. The obtainedQ‐factor was improved to 93,000, which is 2.4 times larger than that in a previous report of a three‐dimensional photonic crystal nanocavity. Due to this largeQ‐factor, a lasing oscillation from this cavity mode was successfully observed.