Effects of floating gate structures on the two-dimensional electron gas density and electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
Effects of floating gate structures on the two-dimensional electron gas density and electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
复制标题
浮栅结构对AlGaN/AlN/GaN异质结构场效应晶体管二维电子气密度和电子迁移率的影响
DOI：
10.3938/jkps.71.963
复制
发表时间：
2017-07
影响因子：
0.6
通讯作者：
Xu Fukai
中科院分区：
文献类型：
--
作者：
Zhao Jingtao;Zhao Zhenguo;Chen Zidong;Lin Zhaojun;Xu Fukai
在这项研究中，我们利用测量的电容-电压(C-V)和电流-电压(I-V)特性研究了具有浮栅结构的AlGaN/AlN/GaN异质结场效应晶体管(HFET)的电学性质。它是
In this study, we have investigated the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with floating gate structures using the measured capacitancevoltage (C-V) and current-voltage (I-V) characteristics. It is