Dislocations in AIN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy
Dislocations in AIN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy
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DOI：
10.1143/jjap.46.1458
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发表时间：
2007-04-01
期刊：
影响因子：
--
通讯作者：
Bandoh, Akira
中科院分区：
文献类型：
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作者：
Imura, Masataka;Nakano, Kiyotaka;Bandoh, Akira
AlN薄膜的生长温度是影响金属有机物气相外延（MOVPE）生长的重要因素之一。AlN层生长使用我们定制的高温MOVPE系统。通过X射线衍射、原子力显微镜（AFM）和透射电子显微镜（TEM）等测试手段对样品的结晶质量进行了分析。在1400摄氏度的温度下生长的样品在X射线摇摆曲线半峰全宽值和AFM均方根粗糙度方面有很大改善的结晶质量。此外，根据TEM分析，在低生长温度下，由小角度晶界引起的刃型位错占主导地位，而这些位错随着生长温度的升高而变少。
The growth temperature of AlN layers is one of the most important factors in metal-organic vapor phase epitaxy (MOVPE) growth. AlN layers were grown using our customized high-temperature MOVPE system. The crystalline quality was discussed on the basis of X-ray diffraction, atomic force microscopy (AFM) and transmission electron microscopy (TEM) measurements. The samples grown at a temperature of 1400 degrees C had much improved crystalline quality in terms of the X-ray rocking curve full width at half maximum values and AFM root-mean-square roughness. In addition, according to TEM analysis, edge type dislocations caused by small-angle grain boundaries were predominant under a low growth temperature, whereas these dislocations became much fewer with increasing growth temperature.