Focused electron-beam-induced etching of silicon dioxide
Focused electron-beam-induced etching of silicon dioxide
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DOI：
10.1063/1.1991976
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发表时间：
2005-08-01
影响因子：
3.2
通讯作者：
Rack, PD
中科院分区：
文献类型：
--
作者：
Randolph, SJ;Fowlkes, JD;Rack, PD
聚焦电子束（FEB）诱导的二氧化硅与二氟化氙的蚀刻作为一种选择性的纳米级蚀刻技术进行了研究。为了获得控制蚀刻速率和蚀刻效率的参数的理解，检查束电流、束能量和扫描速率条件对FEB过程的影响。对于低束能量、高束电流和高扫描速率，获得高蚀刻速率。实验结果还表明，FEB蚀刻过程是由电子刺激的脱附的氧从SiO2矩阵，并随后速率限制XeF2的可用性。基于实验证据和现有文献，一个简单的，两步模型被引入到定性描述的蚀刻机制。该模型涉及到一个循环过程，这是由减少表面层的二氧化硅元素硅。然后通过化学介导的蚀刻反应去除暴露的硅表面。(c)2005年美国物理学会。
Focused electron-beam (FEB)-induced etching of silicon dioxide with xenon difluoride has been investigated as a selective nanoscale etching technique. In order to gain an understanding of the parameters that control etch rate and etch efficiency, the effects of beam current, beam energy, and scan rate conditions on the FEB process were examined. High etch rates were obtained for low beam energy, high beam current, and high scan rates. Experimental results also indicated that the FEB etch process is governed by the electron-stimulated desorption of oxygen from the SiO2 matrix, and subsequently rate limited by XeF2 availability. Based on experimental evidence and existing literature, a simple, two-step model was introduced to qualitatively describe the etch mechanism. The model involves a cyclical process, which is initiated by the reduction of a surface layer of SiO2 to elemental silicon. The exposed silicon surface is then removed by a chemical-mediated etch reaction. (c) 2005 American Institute of Physics.