Fabrication and characterization of P–N dual acceptor doped p-type ZnO thin films
Fabrication and characterization of P–N dual acceptor doped p-type ZnO thin films
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DOI：
10.1016/j.apsusc.2013.10.010
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发表时间：
2013-12
影响因子：
6.7
通讯作者：
Y. Sui;B. Yao;L. Xiao;Lihua Yang;Jiangwei Cao;X. Li;G. Xing;J. Lang;X. Y. Li;Shiquan Lv;Xiangdong Meng;L. Xiaoqing;Jianchun Yang
中科院分区：
文献类型：
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作者：
Y. Sui;B. Yao;L. Xiao;Lihua Yang;Jiangwei Cao;X. Li;G. Xing;J. Lang;X. Y. Li;Shiquan Lv;Xiangdong Meng;L. Xiaoqing;Jianchun Yang
采用射频磁控溅射和退火技术制备了P、N双受主掺杂的p型ZnO（ZnO：（P，N））薄膜。采用X射线衍射（XRD）、二次离子质谱（西姆斯）、X射线光电子能谱（XPS）和霍尔测量技术对样品的结构和电学性能进行了详细的研究。结果表明，ZnO：（P，N）薄膜的电学性质对退火温度非常敏感，在650 °C ~ 850 °C范围内，薄膜的导电类型由n型顶部型转变为弱p型。当退火温度为800 °C时，薄膜的电阻率为3.98 Ω cm，空穴浓度为1.16 × 1018 cm-3，霍尔迁移率为1.35 cm 2/Vs。p-ZnO：（P，N）/n-ZnO同质结的整流I-V特性证实了ZnO：（P，N）薄膜的p型导电行为。用XPS分析了ZnO：（P，N）薄膜中P和N的化学键状态。
P and N dual-acceptor dopedp-type zinc oxide (ZnO:(P, N)) films have been realized by radio frequency (rf) magnetron sputtering and post-annealing techniques. The X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS) and the Hall measurement techniques were employed to investigate the structural and the electrical properties in detail. Results indicated the electrical properties of the ZnO:(P, N) films were extremely sensitive to the annealing temperature and the conduction type could be changed dramatically fromn-type top-type, and finally changed to weakp-type in a range from 650 °C to 850 °C. Thep-type ZnO:(P, N) film with the lower resistivity of 3.98 Ω cm, a hole concentration and Hall mobility of 1.16 × 1018cm−3and 1.35 cm2/Vs, respectively, was obtained at an optimal annealing temperature of 800 °C. Thep-type conduction behavior of the ZnO:(P, N) film was confirmed by the rectifyingI–Vcharacteristics of thep-ZnO:(P, N)/n-ZnO homojunction. The chemical bonding states of P and N doped in ZnO:(P, N) film were examined by XPS analysis.