Development of a ToF Pixel With VOD Shutter Mechanism, High IR QE, Four Storages, and CDS
Development of a ToF Pixel With VOD Shutter Mechanism, High IR QE, Four Storages, and CDS
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开发具有 VOD 快门机制、高 IR QE、四个存储和 CDS 的 ToF 像素
DOI：
10.1109/ted.2016.2560941
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发表时间：
2016
影响因子：
3.1
通讯作者：
A. Fish
中科院分区：
文献类型：
--
作者：
Erez Tadmor;David Cohen;G. Yahav;Guy Tennenholtz;Gadi Lehana;A. Lahav;A. Birman;A. Fenigstein;A. Fish
本文讨论了在0.11 μm CMOS图像传感器技术中的间接飞行时间（ToF）像素的开发。像素设计基于具有用于快速调制的新颖垂直溢出漏（VOD）快门机制的钉扎光电二极管结构。我们提出了第二代像素，具有大大改进的VOD结构，能够实现优于1：100的快速快门效率和更深的光电二极管收集深度，以获得近红外波长的更好量子效率。我们提出了一种新的6.7 μm像素设计，具有四个钉扎存储二极管（SD），其具有像素内完全电荷转移的功能，并实现相关双采样读出，以及用于场景深度计算的多达四个交错帧的几乎同时的全局快门曝光。这种新颖的设计具有7.5e的低读出噪声和9500eper SD的全阱容量（总共38000eper像素）。
In this paper we discuss the development of an indirect time-of-flight (ToF) pixel in the 0.11-μm CMOS image sensor technology. The pixel design is based on a pinned-photodiode structure with a novel vertical overflow drain (VOD) shutter mechanism used for fast modulation. We present the second generation of the pixel, with a greatly improved VOD structure that enables a fast shutter efficiency better than 1:100 and a deeper photodiode collection depth for better quantum efficiency in the near-infrared wavelengths. We present a new 6.7-μm pixel design with four pinned storage diodes (SDs) that feature in-pixel complete charge transfer and enable correlated-double-sampling readout as well as an almost simultaneous global shutter exposure of up to four interleaved frames to be used for the scene depth computation. The novel design features a low readout noise of 7.5e-and a full-well-capacity of 9500eper SD (a total of 38000eper pixel).