GALLIUM IMPLANTATION INDUCED DEEP LEVELS IN N-TYPE 6H-SIC
GALLIUM IMPLANTATION INDUCED DEEP LEVELS IN N-TYPE 6H-SIC
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N 型 6H-SIC 中的镓注入引起深能级
DOI：
10.1063/1.369428
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发表时间：
1998
影响因子：
3.2
通讯作者：
W. Skorupa
中科院分区：
文献类型：
--
作者：
M. Gong;S. Fung;C. Beling;G. Brauer;H. Wirth;W. Skorupa
用深能级瞬态谱在镓注入p + n二极管中观察到两个Ga受主能级，分别位于EV +0.31 eV和EV +0.37 eV。注入镓的行为与注入铝的行为非常相似，除了引入能级的位置不同。这一结果有力地支持了最近的模型，该模型被用来解释硼和铝注入诱导的深能级之间的差异结果。除了两个受体水平，热稳定的电子陷阱也观察到，并已暂时归因于镓相关的复杂。
Two Ga-acceptor levels, located at EV+0.31 eV and EV+0.37 eV, respectively, have been observed in the gallium implantation manufactured p+n diodes using deep level transient spectroscopy. The behavior of the implanted gallium is very similar to that of implanted aluminum, except that the positions of the introduced levels are different. This result strongly supports the recent model, which was used to explain the discrepant results between boron and aluminum implantation induced deep levels. Besides the two acceptor levels, a thermally stable electron trap is also observed and has been tentatively attributed to a Ga-related complex.