Gallium Nitride Nanowire Based Nanogenerators and Light-Emitting Diodes
Gallium Nitride Nanowire Based Nanogenerators and Light-Emitting Diodes
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DOI：
10.1021/nn301814w
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发表时间：
2012-06-01
期刊：
影响因子：
17.1
通讯作者：
Wang, Zhong Lin
中科院分区：
文献类型：
--
作者：
Chen, Chih-Yen;Zhu, Guang;Wang, Zhong Lin
在掺镁的p型GaN衬底上外延生长了单晶n型GaN纳米线。利用导电原子力显微镜（AFM）对GaN纳米线压电纳米发电机进行了研究，其输出功率密度接近12.5mW/m2。制备了基于n-GaN纳米线/p-GaN衬底的发光LED模块。在正向偏压下记录发光LED的CCD图像和相应的电致发光光谱。此外，GaN纳米线LED可以由基于ZnO纳米线的纳米发电机提供的电力点亮，展示了使用纤锌矿结构纳米材料的自供电LED。
Single-crystal n-type GaN nanowires have been grown epitaxially on a Mg-doped p-type GaN substrate. Piezoelectric nanognerators based on GaN nanowires are investigated by conductive AFM, and the results showed an output power density of nearly 12.5 mW/m(2). Luminous LED modules based on n-GaN nanowires/p-GaN substrate have been fabricated. CCD images of the lighted LED and the corresponding electroluminescence spectra are recorded at a forward bias. Moreover, the GaN nanowire LED can be lighted up by the power provided by a ZnO nanowire based nanogenerator, demonstrating a self-powered LED using wurtzite-structured nanomaterials.