Anomalous Nernst effect in ferromagnetic Mn5Ge3Cx thin films on insulating sapphire
Anomalous Nernst effect in ferromagnetic Mn5Ge3Cx thin films on insulating sapphire
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DOI：
10.1063/5.0014815
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发表时间：
2020-07-21
影响因子：
3.2
通讯作者：
Suergers, C.
中科院分区：
文献类型：
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作者：
Kraft, R.;Srichandan, S.;Suergers, C.
研究铁磁体的热电特性对于开发未来用于高效能量转换的微电子器件非常重要。居里温度高达 T-C = 450K 远高于室温的铁磁 Mn5Ge3Cx 薄膜是通过集成到 CMOS 异质结构中用于自旋电子应用的潜在候选者。在这项工作中，我们对蓝宝石（11 (2) over bar0）衬底上的磁控溅射薄膜的热电势，特别是反常能斯特效应（ANE）进行了实验研究。 ANE 随着碳含量 x 的增加而逐渐增加，直至 x = 0.8 时获得的最大值，这与磁化强度和反常霍尔效应的早期研究一致。与母体 Mn5Ge3 化合物相比，ANE 显着增强了三倍。然而，当 x = 0.8 时，我们观察到计算的 ANE 与测量值存在明显偏差。
Investigating the thermoelectric properties of ferromagnets is important for the development of future microelectronic devices for efficient energy conversion purposes. Ferromagnetic Mn5Ge3Cx thin films with a Curie temperature up to T-C = 450K well above room temperature are potential candidates for spintronic applications by integration into CMOS heterostructures. In this work, the thermoelectric power, in particular, the anomalous Nernst effect (ANE), has been investigated experimentally for magnetron sputtered thin films on sapphire (11 (2) over bar0) substrates. The ANE gradually increases with increasing carbon content x up to a maximum value obtained for x = 0.8 in line with the earlier investigations of the magnetization and anomalous Hall effect. The ANE is strongly enhanced by a factor three compared to the parent Mn5Ge3 compound. However, for x = 0.8, we observe a clear deviation of the calculated ANE from the measured values.