Thermal stability of hydrogenated diamond films in nitrogen ambience studied by reflection electron energy spectroscopy and X-ray photoelectron spectroscopy
Thermal stability of hydrogenated diamond films in nitrogen ambience studied by reflection electron energy spectroscopy and X-ray photoelectron spectroscopy
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反射电子能谱和X射线光电子能谱研究氢化金刚石薄膜在氮气气氛中的热稳定性
DOI：
10.1016/j.apsusc.2015.10.067
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发表时间：
2016-12
影响因子：
6.7
通讯作者：
Linjun Wang
中科院分区：
文献类型：
--
作者：
Weichuan Yang;Lin Wang;Zhangmin Pan;Linjun Wang
采用微波等离子体化学气相沉积技术生长了（110）取向的金刚石薄膜，并对氢等离子体处理工艺进行了优化。通过在400 ~ 950 °C温度范围内氮气气氛中退火，研究了氢化金刚石薄膜的热稳定性。与X射线光电子能谱相关的反射电子能谱表明，近似在。氢化金刚石膜表面存在50%的氢，这与理论值接近。氢化金刚石薄膜表面费米能级的钉扎效应在950 °C以上才能通过氮气退火消除。薄膜经历了氢脱附和随后的石墨化主要是在非常表面的区域没有显着的本体改性。此外，在N2气氛中950 °C退火处理的氢化金刚石薄膜显示出与氧化金刚石薄膜相似的亲水性和耐腐蚀性，表明氢化金刚石薄膜表面的C-H键断裂。
(1 1 0)-oriented diamond films were grown by microwave plasma chemical vapor deposition technique, followed by an optimized hydrogen-plasma treatment process. Thermal stability of hydrogenated diamond films were studied by annealing in nitrogen atmosphere at temperature varied from 400 to 950 °C. Reflection electron energy spectroscopy associated with X-ray photoelectron spectroscopy indicates that approximate at. 50% hydrogen was present at the surface of hydrogenated diamond films, which is close to the theoretical value. Pinning effect in surface Fermi level in hydrogenated diamond films could not be eliminated by annealing in nitrogen until the temperature was exceeded 950 °C. The films underwent hydrogen desorption and subsequent graphitization mainly on the very surface region without significant bulk modification. Besides, hydrogenated diamond films annealed in N2at 950 °C showed similar hydrophilicity and resistance to that of the oxidized one, indicating rupture of C-H bond on the surface of hydrogenated diamond films.
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影响因子：
4.1
作者：
Kaibara, Y;Sugata, K;Kawarada, H
通讯作者：
Kawarada, H
影响因子：
3.7
作者：
J. Cui;J. Ristein;L. Ley
通讯作者：
J. Cui;J. Ristein;L. Ley
影响因子：
3.2
作者：
S. Michaelson;A. Stacey;J. Orwa;A. Cimmino;S. Prawer;B. Cowie;O. Williams;D. Gruen;A. Hoffman-A.-Hof
通讯作者：
S. Michaelson;A. Stacey;J. Orwa;A. Cimmino;S. Prawer;B. Cowie;O. Williams;D. Gruen;A. Hoffman-A.-Hof
DOI：
10.1088/0022-3727/38/3/018
发表时间：
2005-02
期刊：
Journal of Physics D: Applied Physics
影响因子：
--
作者：
Linjun Wang;Jinfang Lu;Minglong Zhang;Ying Yang;L. Wang;Q. Su;W. Shi;Yiben Xia
通讯作者：
Linjun Wang;Jinfang Lu;Minglong Zhang;Ying Yang;L. Wang;Q. Su;W. Shi;Yiben Xia
影响因子：
5.4
作者：
H. Chen;B. Shen;Jinbao Xu;J. Zhai
通讯作者：
H. Chen;B. Shen;Jinbao Xu;J. Zhai