Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3 μm by using quantum dot bi-layer for broadband light source
Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3 μm by using quantum dot bi-layer for broadband light source
复制标题
DOI：
10.1016/j.jcrysgro.2012.12.110
复制
发表时间：
2013-09
影响因子：
1.8
通讯作者：
N. Ozaki;Y. Nakatani;S. Ohkouchi;N. Ikeda;Y. Sugimoto;K. Asakawa;E. Clarke;R. Hogg
中科院分区：
文献类型：
--
作者：
N. Ozaki;Y. Nakatani;S. Ohkouchi;N. Ikeda;Y. Sugimoto;K. Asakawa;E. Clarke;R. Hogg
