Investigation of etching characteristics of HVPE-grown c-In2O3 layers by hydrogen-environment anisotropic thermal etching
Investigation of etching characteristics of HVPE-grown c-In2O3 layers by hydrogen-environment anisotropic thermal etching
复制标题
氢环境各向异性热刻蚀研究 HVPE 生长的 c-In2O3 层的刻蚀特性
DOI：
10.1016/j.jcrysgro.2021.126338
复制
发表时间：
2021
影响因子：
1.8
通讯作者：
and Akihiko Kikuchi
中科院分区：
文献类型：
--
作者：
Rie Togashi;Ryo Kasaba;Ken Goto;Yoshinao Kumagai;and Akihiko Kikuchi
