Low-temperature preparation of high-temperature nickel germanides using multilayer reactants
Low-temperature preparation of high-temperature nickel germanides using multilayer reactants
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DOI：
10.1021/cm030385v
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发表时间：
2003-11
影响因子：
8.6
通讯作者：
J. M. Jensen;Sochetra Ly;David C. Johnson
中科院分区：
文献类型：
--
作者：
J. M. Jensen;Sochetra Ly;David C. Johnson
以镍锗多层膜为反应前驱体制备了锗化镍薄膜。在xNi = 0.24-0.42的组成范围内，高温锗化物（δ-Ni 5Ge 2，∈-Ni 5Ge 3和Ni 3Ge 2）在热力学不稳定的条件下形成。δ-Ni 5Ge 2的形成比以前观察到的成分范围更广。这三个高温相通过这种合成路线访问观察到共享相关的结构类型，这是与具有类似的组合物的非晶镍锗合金的结构。在温和条件下选择性制备亚稳相的能力对于寻找用于集成器件的新材料具有重要意义。
Nickel germanide thin films were prepared using nickel-germanium multilayers as reactive precursors. Over the composition range x Ni = 0.24-0.42, high-temperature germanides (δ-Ni 5 Ge 2 , ∈-Ni 5 Ge 3 , and Ni 3 Ge 2 ) form under conditions where the phases are thermodynamically unstable. δ-Ni 5 Ge 2 forms over a broader range of composition than has been observed previously. The three high-temperature phases accessible by this synthetic route are observed to share related structure types, which are related to the structure of amorphous nickel germanium alloys with similar composition. The ability to selectively prepare metastable phases under mild conditions has important implications with respect to the search for new materials for use in integrated devices.