Integration of antiferromagnetic Heusler compound Ru2MnGe into spintronic devices
Integration of antiferromagnetic Heusler compound Ru2MnGe into spintronic devices
复制标题
DOI：
10.1063/1.4985179
复制
发表时间：
2017-07-17
影响因子：
4
通讯作者：
Reiss, Guenter
中科院分区：
文献类型：
--
作者：
Balluff, Jan;Huminiuc, Teodor;Reiss, Guenter
我们报道了一种反铁磁Heusler化合物作为钉钉层集成到磁性隧道结（MTJs）中。利用反铁磁体Ru2MnGe来固定MgO基薄膜隧道磁阻堆中铁磁性铁层的磁化方向。采用磁控共溅射法制备样品。我们通过x射线衍射和反射，原子力和高分辨率透射电子显微镜研究了其结构性质。我们发现晶体生长质量优异，界面粗糙度低，为1-3埃，这对制备工作隧道势垒至关重要。以铁作为铁磁电极材料，制备了磁性隧道结，并对其磁电阻进行了测量。我们发现一个相当大的最大磁阻值为135%，这与其他常见的铁基MTJ系统相当。AIP出版社出版。
We report on the integration of an antiferromagnetic Heusler compound acting as a pinning layer into magnetic tunneling junctions (MTJs). The antiferromagnet Ru2MnGe is used to pin the magnetization direction of a ferromagnetic Fe layer in MgO based thin film tunneling magnetoresistance stacks. The samples were prepared using magnetron co-sputtering. We investigate the structural properties by X-ray diffraction and reflection, as well as atomic force and high-resolution transmission electron microscopy. We find an excellent crystal growth quality with a low interface roughnesses of 1-3 angstrom, which is crucial for the preparation of working tunneling barriers. Using Fe as a ferromagnetic electrode material, we prepared magnetic tunneling junctions and measured the magnetoresistance. We find a sizeable maximum magnetoresistance value of 135%, which is comparable to other common Fe based MTJ systems. Published by AIP Publishing.