Comparative study of 200-300 GHz microwave power generation in GaN TEDs by the Monte Carlo technique
Comparative study of 200-300 GHz microwave power generation in GaN TEDs by the Monte Carlo technique
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DOI：
10.1088/0268-1242/16/9/311
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发表时间：
2001-09
影响因子：
1.9
通讯作者：
V. Gruzinskis;P. Shiktorov;E. Starikov;Jian H. Zhao
中科院分区：
文献类型：
--
作者：
V. Gruzinskis;P. Shiktorov;E. Starikov;Jian H. Zhao
用Monte Carlo粒子模拟方法研究了n+-n-n-n-n+锌掺杂GaN和n+-p-n-n-n+纤锌矿GaN结构在200-300 GHz频率范围内的电子输运和微波功率产生。结果表明，在300 K，230-250 GHz频率范围内，n+-p-n-n-n+纤锌矿GaN结构在连续波工作模式下可以输出超过350 mW的微波功率，在脉冲工作模式下可以输出超过1.3 W的微波功率。
Electron transport and microwave power generation in the 200-300 GHz frequency range by n+-n--n-n+ zincblende GaN and n+-p-n-n--n+ wurtzite GaN structures have been studied by a Monte Carlo particle simulation which solves the Boltzmann transport and Poisson's equations along with equations governing the associated circuit elements and parasitic contact resistance. It is shown that at 300 K in the 230-250 GHz frequency range over 350 mW microwave power can be delivered by the n+-p-n-n--n+ wurtzite GaN structure in continuous wave operation mode and over 1.3 W in pulsed mode.