Influence of in-situ SiNx mask on the quality of N-polar GaN films
Influence of in-situ SiNx mask on the quality of N-polar GaN films
复制标题
原位SiNx掩模对N极GaN薄膜质量的影响
DOI：
10.1016/j.mssp.2016.11.034
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发表时间：
2017
影响因子：
4.1
通讯作者：
Du Guotong
中科院分区：
文献类型：
--
作者：
Yan Long;Zhang Yuantao;Xu Heng;Li Ling;Jiang Junyan;Huang Zhen;Han Xu;Song Junfeng;Du Guotong
We utilized in-situ grown SiN x insertion mask to improve the quality of N-polar GaN films on sapphire substrates by metal-organic chemical vapor deposition. The influences of deposition time and position of SiN x insertion mask were studied. Under the optimal SiN x mask growth conditions, the full width at half maximum values of (0002) and (10 1¯ 2) XRD rocking curves of N-polar GaN films are decreased to 88 ″and 172 ″, respectively. Simultaneously, Raman spectroscopy measurements reveal that SiN x mask can also reduce the tensile residual stress of N-polar GaN films. In addition, the electrical and optical properties of N-polar GaN films with and without SiN x insertion mask were investigated by temperature dependent Hall and photoluminescence measurements. It is found that N-polar GaN film with SiN x insertion mask has lower background carrier concentration, higher mobility and lower nonradiative recombination rate.
