Drastic reduction of leakage current in ferroelectric Bi3.15Nd0.85Ti3O12 films by ionizing radiation
Drastic reduction of leakage current in ferroelectric Bi3.15Nd0.85Ti3O12 films by ionizing radiation
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DOI：
10.1016/j.nimb.2010.12.066
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发表时间：
2011-02
影响因子：
1.3
通讯作者：
Q. Shi;Ying Ma;Yushu Li;Yichun Zhou
中科院分区：
文献类型：
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作者：
Q. Shi;Ying Ma;Yushu Li;Yichun Zhou
Bi3。 15Nd0。采用溶胶-凝胶法在 Pt/Ti/SiO2/Si 衬底上生长 85Ti3O12 (BNT) 铁电薄膜。将样品暴露于不同剂量的电离辐射。辐射后观察到晶体结构的扭曲、表面粗糙度的变化以及残余极化的降低。对于受到 100 Mrad 辐射的薄膜，还观察到漏电流降低了四个数量级，这可以通过晶界势垒高度的增加来解释。我们的结果表明，电离辐射可能是改变非易失性存储器件中使用的铁电薄膜性能的有效工具。
Bi3. 15Nd0. 85Ti3O12 (BNT) ferroelectric thin films were grown on Pt/Ti/SiO2/Si substrates by a sol-gel method. The samples were exposed to different dosage of ionizing radiation. Distortions in the crystalline structure, changes in the surface roughness and decrease in the remnant polarization were observed after radiation. For films subjected to 100 Mrad radiation, decrease in the leakage current up to four orders of magnitude was also observed, which can be explained by the increased grain boundary barrier height. Our results suggest that ionizing radiation could be an effective tool in modifying the properties of ferroelectric thin film for use in non-volatile memory devices.