Carrier Dynamics in Quantum Well Lasers
Carrier Dynamics in Quantum Well Lasers
复制标题
量子阱激光器中的载流子动力学
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
J. Moloney
中科院分区：
文献类型：
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作者：
A. Thränhardt;S. Koch;J. Hader;J. Moloney
本文采用全微观理论分析了半导体量子威尔斯中载流子-载流子和载流子-LO声子的散射，重点讨论了与激光器结构相关的高密度情况。根据材料参数，观察到散射时间的大方差，在某些情况下显然与流行的信念相矛盾。例如，当载流子密度增加时，载流子-载流子散射可以减慢。发现电子-空穴散射时间与载流子-声子散射处于同一数量级，因此需要引入单独的电子和空穴温度。加热光泵浦的研究和等离子体冷却被证明是可能的激光器结构的光泵浦。
A fully microscopic theory is used to perform an analysis of carrier–carrier and carrier-LO phonon scattering in semiconductor quantum wells, focussing on the high-density case relevant for laser structures. A large variance of scattering times is observed depending on the material parameters, apparently contradicting popular belief in some cases. For instance, carrier–carrier scattering may slow down when the carrier density is increased. Electron-hole scattering times are found to be on the same order of magnitude as carrier-phonon scattering, making the introduction of a separate electron and hole temperature necessary. Heating by optical pumping is investigated and plasma cooling is shown to be possible by optical pumping of the laser structure.