Inverted Hexagonal-Pyramid Growth of InN by Electric-Field Enhanced Metal Organic Chemical Vapor Deposition

Inverted Hexagonal-Pyramid Growth of InN by Electric-Field Enhanced Metal Organic Chemical Vapor Deposition
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DOI:
10.7567/jjap.52.011001
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发表时间:
2012
影响因子:
1.5
通讯作者:
Y. Ota;T. Inushima
Y. Ota;T. Inushima
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
Y. Ota;T. Inushima

文献摘要

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我们报告了一个单畴生长的InN蓝宝石衬底上的电场增强极性控制金属有机化学气相沉积。当施加的电场方向与薄膜生长方向相反时,InN生长出具有In极性表面的倒六棱锥形状。利用畴壁结构和铁电体在外场中生长的知识,提出了一个生长模型,解释了In极性单畴InN在电场作用下的快速生长.
We report on a single domain growth of InN on sapphire substrates by electric-field enhanced polarity-controlling metal–organic chemical vapor deposition. When the electric field is applied in the opposite direction to the film growth, InN grows inverted hexagonal-pyramid shapes with In-polarity surfaces. A growth model is presented to explain the rapid growth of the single domain InN with In-polarity under electric field using the knowledge of the domain wall structure and the growth of ferroelectrics in the external field.