Highly Stable Hysteresis-Free Carbon Nanotube Thin-Film Transistors by Fluorocarbon Polymer Encapsulation
Highly Stable Hysteresis-Free Carbon Nanotube Thin-Film Transistors by Fluorocarbon Polymer Encapsulation
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DOI：
10.1021/am5013326
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发表时间：
2014-06-11
影响因子：
9.5
通讯作者：
Javey, Ali
中科院分区：
文献类型：
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作者：
Ha, Tae-Jun;Kiriya, Daisuke;Javey, Ali
我们报道了采用氟碳聚合物（Teflon-AF）作为封装层的无滞后碳纳米管薄膜晶体管（cnt - tft）。这种氟碳封装提高了设备的均匀性，在空气中甚至在水中都具有优异的运行稳定性。含氟聚合物具有高疏水性，可以有效地去除纳米管附近的水分子，而纳米管会引起电荷捕获。此外，与碳氟键相关的强偶极子可以有效地筛选衬底中不同阱态的纳米管中的载流子。我们还报道了Teflon-AF封装在实现双栅极cnt - tft中的扩展应用，其中一个栅极用于控制阈值电压，另一个用于开关器件。氟碳封装技术为提高器件可靠性提供了一种很有前途的方法，这对未来基于碳纳米管的系统级电子产品至关重要。
We report hysteresis-free carbon nanotube thin-film transistors (CNT-TFTs) employing a fluorocarbon polymer (Teflon-AF) as an encapsulation layer. Such fluorocarbon encapsulation improves device uniformity with excellent operation stability in air and even in water. The fluoropolymers possess high hydrophobicity for efficient removal of water molecules from the vicinity of nanotubes, which are known to induce charge trapping. In addition, the strong dipole associated with the carbon-fluorine bonds can provide effective screening of the charge carriers in nanotubes from various trap states in the substrate. We also report on the extended applications of encapsulation with Teflon-AF for the realization of dual-gate CNT-TFTs, where one gate is used to control the threshold voltage and the other to switch the device. The fluorocarbon encapsulation technique presents a promising approach for enhanced device reliability, which is critical for future system-level electronics based on CNTs.