Recommended Methods to Study Resistive Switching Devices
Recommended Methods to Study Resistive Switching Devices
复制标题
研究电阻开关器件的推荐方法
DOI：
10.1002/aelm.201800143
复制
发表时间：
2019-01-01
影响因子：
6.2
通讯作者：
Shi, Yuanyuan
中科院分区：
文献类型：
--
作者：
Lanza, Mario;Wong, H-S Philip;Shi, Yuanyuan
电阻开关（RS）是由一些材料系统显示的有趣的性质，特别是在过去十年中，其对于电子器件的制造已经获得了很多兴趣，其中电子非易失性存储器是受到最多关注的那些。材料系统中RS现象的存在和质量可以使用不同的原型细胞，进行不同的实验，显示不同的品质因数，并开发不同的计算分析来研究。因此，每项研究中提出的关于遥感技术的调查结果的真实的有用性和影响也将不同。这份手稿描述了RS器件的制造、表征和模拟的最可行的方法，以及显示所获得数据的适当方法。这样做的目的是帮助科学界评价遥感研究对遥感技术发展的真实的用处和影响。
Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.