Super Field Plate Technique That Can Provide Charge Balance Effect for Lateral Power Devices Without Occupying Drift Region
Super Field Plate Technique That Can Provide Charge Balance Effect for Lateral Power Devices Without Occupying Drift Region
复制标题
无需占用漂移区即可为横向功率器件提供电荷平衡效果的超级场板技术
DOI：
10.1109/ted.2020.2981264
复制
发表时间：
2020-05-01
影响因子：
3.1
通讯作者：
Sun, Weifeng
中科院分区：
文献类型：
--
作者：
Zhang, Chunwei;Guo, Haijun;Sun, Weifeng
超结已经成为功率器件设计中最重要的概念。然而，传统的超结技术应用于横向功率器件时仍然存在两个问题：漂移区的大部分被p型区占据，以及超结技术不适用于氮化镓基高电子迁移率晶体管（GaN-HEMT）。为了解决这些问题，提出了一种超级场板（SuFP）技术作为电荷平衡原理。我们的分析证明，SuFP可以提供横向双扩散MOS（LDMOS）的电荷平衡效应，而不占用漂移区。结果表明，采用SuFP的LDMOS比采用其他电荷平衡实现技术的LDMOS具有更好的性能。此外，作为一种场板，SuFP也适用于GaN-HEMT。因此，所提出的SuFP技术克服了传统超结技术中的两个问题，并且对于横向功率器件具有重要意义。
The super junction has been the most important concept for the design of power devices. However, there are still two problems when the conventional super-junction techniques are applied on lateral power devices: a large portion of the drift region is occupied by a p-type region, and the super junction techniques are not suitable for the gallium nitride-based high electron mobility transistor (GaN-HEMT). To solve the problems, a super field plate (SuFP) technique is proposed as a charge balance principle. Our analyses proved that the SuFP can provide a charge balance effect for a lateral double diffused MOS (LDMOS) without occupying the drift region. As a result, the LDMOS with SuFP has a better performance than the LDMOS with other charge balance realization techniques. Moreover, as a kind of field plate, the SuFP is also suitable for GaN-HEMT. Thereby, the proposed SuFP technique overcomes the two problems in conventional super-junction techniques and is significant for lateral power devices.