High temperature setup for measurements of Seebeck coefficient and electrical resistivity of thin films using inductive heating.
High temperature setup for measurements of Seebeck coefficient and electrical resistivity of thin films using inductive heating.
复制标题
使用感应加热测量薄膜塞贝克系数和电阻率的高温装置。
DOI：
--
复制
发表时间：
2015
影响因子：
1.6
通讯作者：
A. Gokirmak
中科院分区：
文献类型：
--
作者：
L. Adnane;N. Williams;H. Silva;A. Gokirmak
我们开发了一套自动同时测量薄膜样品从室温到ρ650°C的塞贝克系数S(T)和电阻率∼(T)的装置。S和ρ是从使用半导体参数分析仪获得的电流-电压(I-V)测量和使用商用热电偶获得的温度测量中提取的。I-V特性的斜率和x轴截距分别代表样品电导G和塞贝克电压。通过测量薄膜的室温电阻率，可以将测量的G(T)刻度为ρ(T)。该装置使用电阻或感应加热来控制样品上的温度和温度梯度。感应加热是通过测试区域周围的钢板和下方产生交流磁场的水冷铜管线圈实现的。根据所需的加热范围，可以仅使用阻性加热或仅使用感应加热，或两者的组合来执行测量。感应加热为测试区域提供了更均匀的加热，不需要接触样品夹持器，可以使用到特定磁性材料的居里温度，温度梯度可以通过线圈和样品的相对位置进行调整。给出了只进行感应加热和只进行电阻加热的低掺杂单晶硅的实验结果。
We have developed an automated setup for simultaneous measurement of Seebeck coefficient S(T) and electrical resistivity ρ(T) of thin film samples from room temperature to ∼650 °C. S and ρ are extracted from current-voltage (I-V) measurements obtained using a semiconductor parameter analyzer and temperature measurements obtained using commercial thermocouples. The slope and the x-axis intercept of the I-V characteristics represent the sample conductance G and the Seebeck voltage, respectively. The measured G(T) can be scaled to ρ(T) by the geometry factor obtained from the room temperature resistivity measurement of the film. The setup uses resistive or inductive heating to control the temperature and temperature gradient on the sample. Inductive heating is achieved with steel plates that surround the test area and a water cooled copper pipe coil underneath that generates an AC magnetic field. The measurements can be performed using resistive heating only or inductive heating only, or a combination of both depending on the desired heating ranges. Inductive heating provides a more uniform heating of the test area, does not require contacts to the sample holder, can be used up to the Curie temperature of the particular magnetic material, and the temperature gradients can be adjusted by the relative positions of the coil and sample. Example results obtained for low doped single-crystal silicon with inductive heating only and with resistive heating only are presented.