Measurement of group effective index in integrated semiconductor optical waveguides
Measurement of group effective index in integrated semiconductor optical waveguides
复制标题
集成半导体光波导中群有效指数的测量
DOI：
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发表时间：
1993
影响因子：
2.6
通讯作者：
C. D. De Bernardi
中科院分区：
文献类型：
--
作者：
S. Morasca;F. Pozzi;C. D. De Bernardi
测量了用金属有机化学气相沉积（MOCVD/SUR）法在InP衬底上生长的InGaAsP/InP适度稀释多量子阱（MQW）光波导在1.55 μ m波段的有效群折射率。所使用的技术是基于由波导本身形成的谐振腔的光谱传输函数的傅立叶分析。精确到小数点后第三位的证明，TE和TM指数之间的差异也得到了证明。<<ETX>>
The effective group index of InGaAsP/InP moderately diluted multiple quantum well (MQW) waveguides grown by metalorganic chemical vapor deposition (MOCVD/sur) on InP has been measured in the 1.55- mu m spectral region. The technique used is based on the Fourier analysis of the spectral transmission function of a resonant cavity formed by the waveguide itself. Accuracy to the third decimal place is demonstrated, and differences between TE and TM indexes are also evidenced.<<ETX>>