High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
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DOI：
10.1021/nl3040674
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发表时间：
2012-07-01
期刊：
影响因子：
10.8
通讯作者：
Javey, Ali
中科院分区：
文献类型：
--
作者：
Fang, Hui;Chuang, Steven;Javey, Ali
我们报道了基于单层(厚度，类似于0.7 nm)WSe2作为有源沟道的高性能p型场效应晶体管，采用化学掺杂的源漏接触和高K栅介质层。顶栅单层晶体管的有效空穴迁移率为“-ISO cm(2)/(V S)，理想的亚阈值摆幅接近60 mV/dec，室温下I-ON/‘OFF为>；10(6)。特别注意了通过使用高功函数的PD接触降低空穴注入的接触电阻，以及通过在WSe2上图案化的NO2化学吸附对接触表面进行简并掺杂。这些结果为具有良好特性的p型单层晶体管提供了一种有前途的材料体系和器件结构。
We report high performance p-type field-effect transistors based on single layered (thickness, similar to 0.7 nm) WSe2 as the active channel with chemically doped source/drain contacts and high-K gate dielectrics. The top-gated monolayer transistors exhibit a high effective hole mobility of "-ISO cm(2)/(V s), perfect subthreshold swing of similar to 60 mV/dec, and I-ON/'OFF of >10(6) at room temperature. Special attention is given to lowering the contact resistance for hole injection by using high work function Pd contacts along with degenerate surface doping of the contacts by patterned NO2 chemisorption on WSe2. The results here present a promising material system and device architecture for p-type monolayer transistors with excellent characteristics.