Role of zinc tin oxide passivation layer at back electrode interface in improving efficiency of Cu2ZnSn(S, Se)4 solar cells
Role of zinc tin oxide passivation layer at back electrode interface in improving efficiency of Cu2ZnSn(S, Se)4 solar cells
复制标题
背电极界面氧化锌锡钝化层对提高Cu2ZnSn(S, Se)4太阳能电池效率的作用
DOI:
10.1016/j.spmi.2021.107133
复制
发表时间:
--
影响因子:
3.1
通讯作者:
Li Yongfeng
中科院分区:
文献类型:
--
作者:
Yang Xiaoyu;Yao Bin;Ding Zhanhui;Deng Rui;ZHao Man;Li Yongfeng
We report a Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cell with a modified structure via inserting an in-.termediate zinc tin oxide (ZTO) layer between Mo electrode and CZTSSe layer in the conventional.CZTSSe solar cell. Comparing with the conventional CZTSSe solar cells (without ZTO layer), the.best photovoltaic performance is obtained for the solar cells with a modified structure. When an.8-nm-thick ZTO passivation layer is inserted, the corresponding device shows the improvements.in performance parameters, including short-circuit current density (J SC ), open-circuit voltage.(V OC ), and fill factor (FF). As a result, we obtained a maximum power conversion efficiency (PCE).of 8.95% for the optimized device with an 8-nm-thick ZTO layer, which is ascribed to the increase.of shunt resistance (R Sh ), decrease of series resistance (R S ) and decrease of reverse saturation.current density (J 0 ). Our results suggest that the ZTO is a promising passivation material at back.electrode interface for optimizing the performance and improving efficiency of CZTSSe-based.solar cells.