Role of zinc tin oxide passivation layer at back electrode interface in improving efficiency of Cu2ZnSn(S, Se)4 solar cells

Role of zinc tin oxide passivation layer at back electrode interface in improving efficiency of Cu2ZnSn(S, Se)4 solar cells
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背电极界面氧化锌锡钝化层对提高Cu2ZnSn(S, Se)4太阳能电池效率的作用

DOI:
10.1016/j.spmi.2021.107133
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发表时间:
--
影响因子:
3.1
通讯作者:
Li Yongfeng
Li Yongfeng
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Yang Xiaoyu;Yao Bin;Ding Zhanhui;Deng Rui;ZHao Man;Li Yongfeng

文献摘要

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本文报道了一种改进结构的Cu 2 ZnSn(S,Se)4(CZTSSe)太阳电池,它是在传统的CZTSSe太阳电池的Mo电极和CZTSSe层之间插入一层中间氧化锌锡(ZTO)层.与传统的CZTSSe太阳能电池(没有ZTO层)相比,具有改进结构的太阳能电池获得光伏性能。the.best当插入0.8nm厚的ZTO钝化层时,相应的器件显示improvements.in性能参数,包括短路电流密度(JSC)、开路电压。(V OC)和填充因子(FF)。结果表明,采用8 nm厚ZTO层的优化器件的最大功率转换效率(PCE)为8.95%,这是由于并联电阻(RSh)增大,串联电阻(RS)减小,反向饱和电流密度(J 0)减小所致.我们的研究结果表明,ZTO是一种有前途的钝化材料在背面电极界面优化性能和提高效率的电池。CZTSSe-based.solar
We report a Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cell with a modified structure via inserting an in-.termediate zinc tin oxide (ZTO) layer between Mo electrode and CZTSSe layer in the conventional.CZTSSe solar cell. Comparing with the conventional CZTSSe solar cells (without ZTO layer), the.best photovoltaic performance is obtained for the solar cells with a modified structure. When an.8-nm-thick ZTO passivation layer is inserted, the corresponding device shows the improvements.in performance parameters, including short-circuit current density (J SC ), open-circuit voltage.(V OC ), and fill factor (FF). As a result, we obtained a maximum power conversion efficiency (PCE).of 8.95% for the optimized device with an 8-nm-thick ZTO layer, which is ascribed to the increase.of shunt resistance (R Sh ), decrease of series resistance (R S ) and decrease of reverse saturation.current density (J 0 ). Our results suggest that the ZTO is a promising passivation material at back.electrode interface for optimizing the performance and improving efficiency of CZTSSe-based.solar cells.