Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics
Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics
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DOI：
10.1063/1.3552932
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发表时间：
2011-03-15
影响因子：
3.2
通讯作者：
Grandjean, N.
中科院分区：
文献类型：
--
作者：
Gonschorek, M.;Carlin, J. -F.;Grandjean, N.
实验观察到，具有短沟道长度的高电子迁移率晶体管器件由氮化物AlInN/AlN/GaN异质结构加工而成，所述氮化物AlInN/AlN/GaN异质结构包含密度超过2 × 10（13）cm（-2）的2D电子气（2DEG），如果它们在高漏极-源极电压下驱动，则表现出高达1000 K的温度。相应的电流-电压（IV）特性显示出峰值行为的最大饱和电流（I-DS，I-max）高达2 A/mm。本文的目标是描述设备加热的LO声子统计的框架及其对通道长度，载流子密度，和施加的电压的依赖性。另一方面，强沟道加热影响传输迁移率，必须考虑到正确解释IV特性并解决与金属氧化物半导体场效应晶体管模型的差异。此外，欧姆接触的击穿可以直接与沟道温度相关，即，沟道达到接触金属化的熔点。此外，该模型正确地预测了IV曲线与2DEG密度和晶体管初始环境温度的关系。对于被限制在异质界面处形成的三角形势威尔斯中的2DEG，发现2DEG密度在2 × 10（13）cm（-2）和3 × 10（13）cm（-2）之间的最大IDS。(C)2011年美国物理学会。[doi：10.1063/1.3552932]
It is observed experimentally that high electron mobility transistor devices with short channel length processed from nitride AlInN/AlN/GaN heterostructures containing 2D electron gases (2DEGs) with densities beyond 2 x 10(13) cm(-2) exhibit temperatures up to 1000 K if they are driven at high drain-source voltages. Corresponding current-voltage (IV) characteristics show a peaklike behavior with a maximum saturation current (I-DS,I-max) up to 2 A/mm. The goal of this article is to describe device heating in the framework of LO phonon statistics and its dependence on channel length, carrier density, and applied voltage. The strong channel heating, on the other hand, affects the transport mobility and must be taken into account to correctly interpret IV characteristics and resolve the discrepancy with metal oxide semiconductor field effect transistor models. Furthermore, the breakdown of ohmic contacts can directly be related to the channel temperature, i.e., the channel reaches the melting point of the contact metallization. In addition, the model correctly predicts the behavior of IV curves versus 2DEG density and transistor initial ambient temperature. For 2DEGs confined in triangular potential wells formed at the heterointerface, a maximum IDS is found for 2DEG densities between 2 x 10(13) and 3 x 10(13) cm(-2). (C) 2011 American Institute of Physics. [doi: 10.1063/1.3552932]