Novel seed layer formation using direct electroless copper deposition on ALD-Ru layer for high aspect ratio TSV

Novel seed layer formation using direct electroless copper deposition on ALD-Ru layer for high aspect ratio TSV
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DOI：
10.1109/iitc.2012.6251660
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发表时间：
2012-06
期刊：
2012 IEEE International Interconnect Technology Conference
影响因子：
--
通讯作者：
F. Inoue;H. Philipsen;A. Radisic;S. Armini;Y. Civale;P. Leunissen;S. Shingubara
F. Inoue;H. Philipsen;A. Radisic;S. Armini;Y. Civale;P. Leunissen;S. Shingubara
中科院分区：
其他
文献类型：
--
作者：
F. Inoue;H. Philipsen;A. Radisic;S. Armini;Y. Civale;P. Leunissen;S. Shingubara

文献摘要

相似文献

用化学沉积的铜种子层在铝Ru衬底上无孔洞地填充了高深宽比的通硅通孔(2μmφ，AR 15)。全铜覆盖层约为700 nm，为ELD和填充的铜。此外，通过控制pH值来稳定沉积过程，化学镀铜液在2小时内表现出良好的稳定性。这些结果表明了化学沉积在TSV加工中的可行性。
High aspect ratio through-Si vias (2 μmφ, AR 15) have been filled without voids on coupon scale by using an electroless deposited Cu seed layer on ALD-Ru. The total Cu overburden, which is ELD and filling Cu, was about 700 nm. In addition, the electroless Cu bath showed good stability during 2 hours with controlling pH to stabilize the deposition process. These results show the feasibility of electroless deposition in TSV processing.