Effects of surface treatments on Schottky barrier formation at metal/n‐type CdTe contacts
Effects of surface treatments on Schottky barrier formation at metal/n‐type CdTe contacts
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DOI：
10.1063/1.101208
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发表时间：
1989-01
影响因子：
4
通讯作者：
I. M. Dharmadasa;J. Thornton;R. H. Williams
中科院分区：
文献类型：
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作者：
I. M. Dharmadasa;J. Thornton;R. H. Williams
通过各种化学处理制备的n-CdTe表面的性质已经通过X射线光电子能谱法进行了研究。在平行的实验肖特基势垒高度已被测量为Sb和Au接触沉积在以相同的方式制备的表面上。还原蚀刻被发现离开表面富含镉，并为这些表面锑和Au总是产生0.93±0.02 eV的势垒高度。溴在甲醇溶液中离开表面富含Te，并引起两个值的势垒高度为0.93和0.72 eV。据发现，产生接触的势垒高度的较高的值的概率增加的表面变得更丰富的镉。
The nature of n‐CdTe surfaces prepared by various chemical treatments has been studied by x‐ray photoelectron spectroscopy. In parallel experiments Schottky barrier heights have been measured for Sb and Au contacts deposited on surfaces prepared in an identical manner. Reducing etches are found to leave the surface rich in Cd, and for these surfaces Sb and Au always produce barrier heights of 0.93±0.02 eV. Bromine in methanol solutions leaves the surface rich in Te and gives rise to two valued barrier heights of 0.93 and 0.72 eV. It is found that the probability of generating contacts with the higher value of barrier height increases as the surface becomes richer in Cd.