Proton radiation damage experiment for X-ray SOI pixel detectors
Proton radiation damage experiment for X-ray SOI pixel detectors
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X射线SOI像素探测器的质子辐射损伤实验
DOI：
10.1016/j.nima.2018.09.057
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Kurachi
中科院分区：
文献类型：
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作者：
Yarita K.;Kohmura T.;Hagino K.;Kogiso T.;Oono K.;Negishi K.;Tamasawa K.;Sasaki A.;Yoshiki S.;Tsuru T. Go;Tanaka T.;Matsumura H.;Tachibana K.;Hayashi H.;Harada S.;Takeda A.;Mori K.;Nishioka Y.;Takebayashi N.;Yokoyama S.;Fukuda K.;Arai Y.;Miyoshi T.;Kurachi
在近地轨道上，有许多主要由高能质子组成的宇宙射线。这些宇宙射线会引起表面和体辐射效应，导致探测器性能下降。辐射硬度的定量评估是研制天文卫星X射线探测器的关键。我们在国家放射科学研究所HIMAC基于绝缘体上硅技术的新开发的名为XRPIX的X射线探测器上进行了质子辐照实验。我们照射了6 MeV质子，总剂量为0.5krad，相当于6年的在轨照射。结果表明，增益提高了0.2%，能量分辨率降低了0.5%。最后，我们照射了高达20krad的质子，发现探测器性能在5krad时显著下降。5krad辐照相当于在轨60年，增益增加0.7%，能量分辨率恶化10%。通过分解成噪声分量，我们发现电路噪声的增加是导致能量分辨率下降的主要原因。
In low earth orbit, there are many cosmic rays composed primarily of high energy protons. These cosmic rays cause surface and bulk radiation effects, resulting in degradation of detector performance. Quantitative evaluation of radiation hardness is essential in development of X-ray detectors for astronomical satellites. We performed proton irradiation experiments on newly developed X-ray detectors called XRPIX based on silicon-on-insulator technology at HIMAC in National Institute of Radiological Sciences. We irradiated 6 MeV protons with a total dose of 0.5 krad, equivalent to 6 years irradiation in orbit. As a result, the gain increases by 0.2% and the energy resolution degrades by 0.5%. Finally we irradiated protons up to 20 krad and found that detector performance degraded significantly at 5 krad. With 5 krad irradiation corresponding to 60 years in orbit, the gain increases by 0.7% and the energy resolution worsens by 10%. By decomposing into noise components, we found that the increase of the circuit noise is dominant in the degradation of the energy resolution.