High Thermoelectric zT in n-Type Silver Selenide films at Room Temperature
High Thermoelectric zT in n-Type Silver Selenide films at Room Temperature
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DOI：
10.1002/aenm.201702024
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发表时间：
2018-03-15
影响因子：
27.8
通讯作者：
Martin-Gonzalez, Marisol
中科院分区：
文献类型：
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作者：
Andres Perez-Taborda, Jaime;Caballero-Calero, Olga;Martin-Gonzalez, Marisol
在这项工作中，zT值高达1.2，在室温下的n型Ag 2Se薄膜的报道，通过脉冲混合反应磁控溅射（PHRMS）。PHRMS是在实验室中开发的一种新技术，可以在几分钟内以高质量生长不同成分的硒化物薄膜。室温下报道的zT值的提高是由高功率因数的组合引起的，类似于大块Ag 2Se报道的最佳值（2440 +/- 192 μ W m（-1）K-2），沿着降低的热电传导率低至0.64 +/- 0.1 W m（-1）K-1。这些薄膜的最大功率因数在103 ℃时为4655 +/- 407 μ W·m（-1）·K-2。这种材料显示出适用于室温应用的前景。获得高zT，或者换句话说，接近室温的薄膜的高功率因数和低热导率值对于开发基于热电热回收的新一代可穿戴设备是非常重要的。
In this work, a zT value as high as 1.2 at room temperature for n-type Ag2Se films is reported grown by pulsed hybrid reactive magnetron sputtering (PHRMS). PHRMS is a novel technique developed in the lab that allows to grow film of selenides with different compositions in a few minutes with great quality. The improved zT value reported for room temperature results from the combination of the high power factors, similar to the best values reported for bulk Ag2Se (2440 +/- 192 mu W m(-1) K-2), along with a reduced thermoelectric conductivity as low as 0.64 +/- 0.1 W m(-1) K-1. The maximum power factor for these films is of 4655 +/- 407 mu W m(-1) K-2 at 103 degrees C. This material shows promise to work for room temperature applications. Obtaining high zT or, in other words, high power factor and low thermal conductivity values close to room temperature for thin films is of high importance to develop a new generation of wearable devices based on thermoelectric heat recovery.