Electron Mobility and Scattering Processes in AgBr at Low Temperatures
Electron Mobility and Scattering Processes in AgBr at Low Temperatures
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低温 AgBr 中的电子迁移率和散射过程
DOI:
10.1103/physrev.119.1560
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发表时间:
1960
期刊:
影响因子:
--
通讯作者:
R. Knox
中科院分区:
文献类型:
--
作者:
D. Burnham;F. C. Brown;R. Knox
The Hall effect for electrons released by light in high-purity crystals of AgBr has been studied experimentally in the temperature range 4\ifmmode^\circ\else\textdegree\fi{} to 120\ifmmode^\circ\else\textdegree\fi{}K. The observed mobilities exceed 20 000 ${\mathrm{cm}}^{2}$/volt-sec at very low temperatures. The general features of the dependence of low-field Hall mobilility on temperature can be understood by comparison with standard theory. A nearly exponential dependence of mobility on $\frac{1}{T}$ is observed from 40\ifmmode^\circ\else\textdegree\fi{} to 120\ifmmode^\circ\else\textdegree\fi{}K, as predicted for scattering by optical vibrations of the lattice. The slope of the ($log\ensuremath{\mu}$) versus $\frac{1}{T}$ data agrees quite well with the Debye $\ensuremath{\Theta}$ for the longitudinal optical mode as deduced from reststrahlen data. Below 40\ifmmode^\circ\else\textdegree\fi{}K the observed mobilities can be explained in terms of a combination of the effects of optical, acoustical and charged impurity scattering. The last process appears to dominate below 15\ifmmode^\circ\else\textdegree\fi{}K. High-field effects are observed which can be explained by classical transport theory assuming a conduction band of standard from as well as isotropic scattering.