Broadband, wide-angle antireflection in GaAs through surface nano-structuring for solar cell applications
Broadband, wide-angle antireflection in GaAs through surface nano-structuring for solar cell applications
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通过表面纳米结构在砷化镓中实现宽带、广角减反射，用于太阳能电池应用
DOI：
10.1038/s41598-020-63327-7
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发表时间：
2020-04-14
影响因子：
4.6
通讯作者：
Hopkinson, Mark
中科院分区：
文献类型：
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作者：
Behera, Saraswati;Fry, Paul W.;Hopkinson, Mark
我们展示了宽带和广角抗反射表面纳米结构的GaAs半导体，使用可变剂量电子束光刻（EBL）。各种设计的结构写在一个积极的EB-抗蚀剂涂敷GaAs和开发，然后由浅电感耦合等离子体蚀刻与EBL。优化的纳米结构表面在450- 700 nm的可见光范围内显示出降低的表面反射率降至小于2.5%，并且在900- 1400 nm的宽近红外波长范围内显示出小于4%的平均反射率。结果是在33.3度的宽入射角上获得的。这项研究显示了使用更简单的反向EBL工艺的抗反射结构的潜力，该工艺可以在半导体中提供光学吸收或提取效率增强，从而改善太阳能光电器件或发光二极管的性能。
We demonstrate broadband and wide-angle antireflective surface nanostructuring in GaAs semiconductors using variable dose electron-beam lithography (EBL). Various designed structures are written with EBL on a positive EB-resist coated GaAs and developed followed by shallow inductively coupled plasma etching. An optimized nanostructured surface shows a reduced surface reflectivity down to less than 2.5% in the visible range of 450-700nm and an average reflectance of less than 4% over a broad near-infrared wavelength range from 900-1400nm. The results are obtained over a wide incidence angle of 33.3 degrees. This study shows the potential for anti-reflective structures using a simpler reverse EBL process which can provide optical absorption or extraction efficiency enhancement in semiconductors relevant to improved performance in solar photovoltaics or light-emitting diodes.