One-dimensional migration of interstitial clusters in SUS316L and its model alloys at elevated temperatures
One-dimensional migration of interstitial clusters in SUS316L and its model alloys at elevated temperatures
复制标题
SUS316L及其模型合金中间隙团簇在高温下的一维迁移
DOI：
10.1080/14786435.2015.1040100
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发表时间：
2015
影响因子：
1.6
通讯作者：
Y. Yamamoto and N. Tanaka
中科院分区：
文献类型：
--
作者：
Y. Satoh;H. Abe;Y. Matsukawa;T. Matsunaga;S. Kano;S. Arai;Y. Yamamoto and N. Tanaka
对于不同浓度合金中的自间隙原子簇（SIA），在300 K左右的电子辐照下可引起一维（1D）迁移。但在高温下，铁基bcc合金的一维迁移频率下降到不到300 K时的十分之一。在这项研究中，我们使用高压电子显微镜对SUS316L及其模型合金进行了现场观察，研究了高温下的一维迁移机制。首先，对于高温，我们研究了退火和短期电子辐照对SIA团簇后续一维迁移的影响。在退火的SUS316L中，1D迁移被抑制，然后在300 K的长时间辐照下恢复。对于高纯度模型合金Fe-18Cr-13Ni，退火或辐照均无影响。在模型合金中加入碳或氧抑制了退火后的一维迁移。锰和硅对退火后的1D迁移没有抑制作用，但对短期电子辐照后的1D迁移有抑制作用。抑制是由于偏析的溶质元素钉住了SIA簇，而恢复是由于电子照射下原子间混合溶解了偏析。接下来，我们研究了SIA团簇在高温连续电子辐照下在SUS316L中的一维迁移。673 K时的一维迁移频率与辐照强度成正比。而在30万美元的时候，这一数字达到了一半。我们提出一维迁移受两个效应的竞争控制：原子间混合诱导一维迁移和溶质偏析抑制一维迁移。
For self-interstitial atom (SIA) clusters in various concentrated alloys, one-dimensional (1D) migration is induced by electron irradiation around 300 K. But at elevated temperatures, the 1D migration frequency decreases to less than one-tenth of that around 300 K in iron-based bcc alloys. In this study, we examined mechanisms of 1D migration at elevated temperatures usingin situobservation of SUS316L and its model alloys with high-voltage electron microscopy. First, for elevated temperatures, we examined the effects of annealing and short-term electron irradiation of SIA clusters on their subsequent 1D migration. In annealed SUS316L, 1D migration was suppressed and then recovered by prolonged irradiation at 300 K. In high-purity model alloy Fe-18Cr-13Ni, annealing or irradiation had no effect. Addition of carbon or oxygen to the model alloy suppressed 1D migration after annealing. Manganese and silicon did not suppress 1D migration after annealing but after short-term electron irradiation. The suppression was attributable to the pinning of SIA clusters by segregated solute elements, and the recovery was to the dissolution of the segregation by interatomic mixing under electron irradiation. Next, we examined 1D migration of SIA clusters in SUS316L under continuous electron irradiation at elevated temperatures. The 1D migration frequency at 673 K was proportional to the irradiation intensity. It was as high as half of that at 300 K. We proposed that 1D migration is controlled by the competition of two effects: induction of 1D migration by interatomic mixing and suppression by solute segregation.