III-V compound semiconductor (001) surfaces
III-V compound semiconductor (001) surfaces
复制标题
III-V族化合物半导体（001）表面
DOI：
10.1007/s003390101058
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
W. Schmidt
中科院分区：
文献类型：
--
作者：
W. Schmidt
摘要：最近的实验和理论研究结果表明，不同于表面上建立良好的二聚体模型的几何结构描述了特定制备条件下的表面基态，从而重新引起了人们对III-V族化合物半导体（001）表面结构的兴趣。简要回顾了GaP、InP、GaAs和InAs（001）面的结构信息。这些数据与第一原理总能量计算相补充。计算的表面相图被用来解释实验数据，并揭示了特定的表面结构的稳定性在很大程度上取决于表面成分的相对大小。本文讨论了富Ga GaAs（001）（4×6）表面的几种结构模型，但由于能量的原因而不予考虑。本文详细讨论了最近提出的富阳离子GaAs（001）<$（4×2）结构的电子性质。
Abstract.There has been renewed interest in the structure of III-V compound semiconductor (001) surfaces caused by recent experimental and theoretical findings, which indicate that geometries different from the seemingly well-established dimer models describe the surface ground state for specific preparation conditions. I review briefly the structure information available on the (001) surfaces of GaP, InP, GaAs and InAs. These data are complemented with first-principles total-energy calculations. The calculated surface phase diagrams are used to explain the experimental data and reveal that the stability of specific surface structures depends largely on the relative size of the surface constituents. Several structural models for the Ga-rich GaAs (001)(4×6) surface are discussed, but dismissed on energetic grounds. I discuss in some detail the electronic properties of the recently proposed cation-rich GaAs (001)ζ(4×2) geometry.