Application of femtosecond laser ablation time-of-flight mass spectrometry to in-depth multilayer analysis.
Application of femtosecond laser ablation time-of-flight mass spectrometry to in-depth multilayer analysis.
复制标题
飞秒激光烧蚀飞行时间质谱在深入多层分析中的应用。
DOI：
10.1021/ac020791i
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发表时间：
2003
影响因子：
7.4
通讯作者：
R. Hergenröder
中科院分区：
文献类型：
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作者：
V. Margetić;K. Niemax;R. Hergenröder
飞秒激光系统与飞行时间质谱仪(TOF-MS)相结合用于半导体和金属样品的深度剖析。半导体样品是共注入的(10(17)个离子/厘米~3)硅片，已经通过其他已建立的技术进行了仔细的表征。浅注入层总深度为150 nm。作为第二个样品，使用了薄膜金属标准(NIST2135c)。该标准由具有9个交替的铬和镍层的硅晶片组成，每个层的厚度分别为56和57 nm。建立了一套正交式飞行时间质谱仪。对这种结构进行了优化，直到获得了足够的质量分辨率300(m/增量m)和灵敏度。实验表明，飞秒激光烧蚀飞行时间质谱仪能够分辨出这些要求很高的样品的深度分布。讨论了测量精度不高的问题，指出这是由于当前激光系统的脉冲间稳定性造成的。飞秒激光烧蚀飞行时间质谱仪被认为是一种具有良好横向分辨率的多层薄膜样品的快速深度剖析技术。
A femtosecond laser system was used in combination with a time-of-flight mass spectrometer (TOF-MS) for in-depth profiling of semiconductor and metal samples. The semiconductor sample was a Co-implanted (10(17) ions/cm3) silicon wafer that had been carefully characterized by other established techniques. The total depth of the shallow implanted layer was 150 nm. As a second sample, a thin film metal standard had been used (NIST 2135c). This standard consisted of a silicon wafer with nine alternating Cr and Ni layers, each having a thickness of 56 and 57 nm, respectively. An orthogonal TOF-MS setup was implemented. This configuration was optimized until a sufficient mass resolution of 300 (m/delta m) and sensitivity was achieved. The experiments revealed that femtosecond-laser ablation TOF-MS is capable of resolving the depth profiles of these demanding samples. The poor precision of the measurements is discussed, and it is shown that this is due to pulse-to-pulse stability of the current laser system. Femtosecond-laser ablation TOF-MS is shown to be a promising technique for rapid in-depth profiling with a good lateral resolution of various multilayer thin film samples.