Strain stabilization of far from equilibrium GaAsBi films
Strain stabilization of far from equilibrium GaAsBi films
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DOI：
10.1016/j.jcrysgro.2019.125216
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发表时间：
2019-12-01
影响因子：
1.8
通讯作者：
Vandervelde, Thomas E.
中科院分区：
文献类型：
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作者：
Stevens, Margaret A.;Grossklaus, Kevin A.;Vandervelde, Thomas E.
在GaAs和InGaAs底层上生长GaAs 1-xBx，以确定全局应变对铋（Bi）掺入的影响。降低压缩应变有助于Bi的掺入，并通过防止Ga-Bi表面液滴形成而导致更高Bi含量的膜。在In-0.105 GaAs缓冲层上的100 nm膜中实现了x = 0.088的最大Bi分数，与在GaAs上生长的层相比，相对改善了24%。进一步增加Bi通量不会导致In-0.105 GaAs上超过x = 0.088的双折射，并且不能操纵应变以掺入更多的铋。应变稳定被认为减少Bi排斥和偏析，这增加了总Bi含量并产生均匀的膜。应变补偿层的使用可以使x = 0.06-0.09含量的赝晶GaAs 1-xBx膜在与光电器件相关的厚度下具有均匀的组成。
GaAs1-xBx was grown on GaAs and InGaAs underlayers to determine the effect of global strain on bismuth (Bi) incorporation. Reducing compressive strain aids in Bi incorporation and results in higher Bi content films by preventing Ga-Bi surface droplet formation. A maximum Bi fraction of x = 0.088 was achieved in a 100 nm film on an In-0.105 GaAs buffer layer, a 24% relative improvement compared to layers grown on GaAs. Increasing Bi flux further did not result in incorporations past x = 0.088 on In-0.105 GaAs and strain could not be manipulated to incorporate more bismuth. Strain stabilization is thought to lessen Bi rejection and segregation, which increases the overall Bi content and yields homogenous films. The use of strain compensating layers can enable x = 0.06-0.09 content pseudomorphic GaAs1-xBx films with uniform composition at thicknesses relevant for optoelectronic devices.