1-Gb/s integrated optical detectors and receivers in commercial CMOS technologies
1-Gb/s integrated optical detectors and receivers in commercial CMOS technologies
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DOI：
10.1109/2944.778271
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发表时间：
1999-03-01
影响因子：
4.9
通讯作者：
Krishnamoorthy, AV
中科院分区：
文献类型：
--
作者：
Woodward, TK;Krishnamoorthy, AV
制造包括光电探测器在内的高性能单片CMOS光接收器的能力可以在短距离通信系统中更多地使用光学器件，这样的接收器需要同时产生与大容量高成品率CMOS工艺兼容的光电探测器以及整个接收器电路的能力。对这种元件的探索还没有产生一个明确的赢家，而且已经被证明是相当具有挑战性的，我们回顾了这一领域的一些工作，目的是让读者了解挑战的根源和实现的权衡，最后，我们报告了用0.35微米生产的CMOS工艺实现的单片CMOS光接收器的实验结果，其中包括一个CMOS光二极管。该接收机在1 Gb/S下工作，在850 nm处的平均输入功率为-6.3dBm，才能获得1x10(-9)的测量误码率：在2.2V时消耗1.5 mW，在3.3V时增加到6 mW。
The ability to produce a high-performance monolithic CMOS photoreceiver, including the photodetector, could enable greater use of optics in short-distance communication systems, Such a receiver requires the ability to simultaneously produce a photodetector compatible with a high-volume high-yield CMOS process, as well as the entire receiver circuit. The quest for this element has yet to produce a clear winner, and has proven quite challenging, We review some of the work in this field with the goal of informing the reader as to the origin of the challenges and the implementation tradeoffs, Finally,we report experimental results from a monolithic CMOS photoreceiver realized in a 0.35-mu m production CMOS process, including a CMOS photodiode. Operating at 1 Gb/s, the receiver requires an average input power of -6.3 dBm at 850 nm to obtain a measured bit-error rate of 1 x 10(-9): and dissipates 1.5 mW at 2.2 V, increasing to 6 mW at 3.3 V.