The Effects of Nodular Colloidal Silica on Chemical Mechanical Polishing
The Effects of Nodular Colloidal Silica on Chemical Mechanical Polishing
复制标题
球状硅溶胶对化学机械抛光的影响
DOI：
10.1143/jjap.42.4992
复制
发表时间：
2003
影响因子：
1.5
通讯作者：
T. Katoda
中科院分区：
文献类型：
--
作者：
Shinichi Haba;Gi;Y. Morioka;Yasushi Kobuchi;T. Katoda
提出了将球粒状硅溶胶用作化学机械抛光（CMP）的耗材。典型的球形胶态二氧化硅浆料在CMP期间有效地降低半导体层间电介质（ILD）膜的缺陷水平和表面粗糙度，但去除速率也降低。因此，为了提高硅基片的去除率，研制了球粒状硅溶胶浆料。球状硅溶胶浆料中的少量颗粒与活性多孔表面相结合。二氧化硅颗粒的表面特性被认为影响等离子体-四乙氧基硅烷（p-TEOS）层间介质膜的去除速率。特别是在酸性条件下，球状二氧化硅浆料对p-TEOS膜的去除率较高，而在碱性条件下，由于表面形态变化，去除率较低。这些CMP性能被认为取决于球形胶体和气相二氧化硅之间的不同特性。
Nodular colloidal silica is proposed to be used as a consumable material for the chemical mechanical polishing (CMP). The typical spherical colloidal silica slurry is effective in decreasing both the defect level and the surface roughness of the semiconductor interlayer dielectric (ILD) film during CMP, but the removal rate is also decreased. Hence, the nodular colloidal silica slurry has been developed for the purpose of improving the removal rate of silicon substrate. A few of particles of the nodular colloidal silica slurry are associated with the active porous surface. The surface characteristics of the silica particles are considered to affect the removal rate of the plasma-tetra-ethoxy-silane (p-TEOS) interlayer dielectric film. In particular in the acidic condition, the nodular colloidal silica slurry yields a high removal rate with p-TEOS film, while in the alkaline condition, it yields a lower removal rate due to the surface morphology change. These CMP performances are recognized to depend on the different characteristics between the spherical colloidal and fumed silica.