Investigating the effect of residual stress on hydrogen cracking in multi-pass robotic welding through process compatible non-destructive testing
Investigating the effect of residual stress on hydrogen cracking in multi-pass robotic welding through process compatible non-destructive testing
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DOI：
10.1016/j.jmapro.2020.03.043
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发表时间：
2021-03-10
影响因子：
6.2
通讯作者：
Gachagan, Anthony
中科院分区：
文献类型：
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作者：
Javadi, Yashar;Sweeney, Nina E.;Gachagan, Anthony
研究了焊接残余应力(WRS)对氢致裂纹(HIC)尺寸和形貌的影响。使用6轴焊接机器人分两批制造了四个样品。两批不同的是所用的夹紧系统，导致焊接变形量和WRS不同。氢裂纹是故意在样品中使用局部水淬火方法制造的，这种方法是在预定位置将水喷洒在特定的焊道上。在焊接过程中实现了相控阵超声检测(PAUT)系统(高温在线法)，对HIC进行实时检测。用打孔法测量了两批样品的WRS，发现两种样品的横向残余应力相差78 Mpa。根据PAUT结果和显微镜观察，WRS越高的批次，HIC的尺寸和数量越大。首次采用高温在线检测的方法实时监测了WRS对HIC的负面影响。这是通过一种创新的方法实现的，本文介绍了一种重复制造高和低WRS样品的方法，以控制后续HIC的大小和位置。
In this paper, the effect of Welding Residual Stress (WRS) on the size and morphology of hydrogen-induced cracks (HIC) is studied. Four samples were manufactured using a 6-axis welding robot and in two separate batches. The difference between the two batches was the clamping system used, which resulted in different amounts of welding deformation and WRS. The hydrogen cracks were intentionally manufactured in the samples using a localised water-quenching method, where water was sprayed over a specific weld pass in a predetermined position. The Phased-Array Ultrasonic Testing (PAUT) system was implemented during the welding process (high-temperature in-process method), to detect the HIC in real-time. The WRS in both batches was measured using the hole-drilling method, where a difference in transversal residual stress of 78 MPa was found between the two samples. Based upon both the PAUT results and microscopic investigations, the batch with higher WRS resulted in larger size and number of HIC. For the first time, the negative effect of WRS on HIC has been monitored in real-time using high-temperature in-process inspection. This was achieved using an innovative approach, introduced in this paper, to repeatably manufacture high and low WRS samples in order to control the size and location of subsequent HIC.