Czochralski growth of 8 inch size BaF2 single crystal for a fast scintillator
Czochralski growth of 8 inch size BaF2 single crystal for a fast scintillator
复制标题
用于快速闪烁体的 8 英寸尺寸 BaF2 单晶的直拉法生长
DOI：
10.1016/j.nima.2004.07.257
复制
发表时间：
2005
影响因子：
1.4
通讯作者：
T. Fukuda
中科院分区：
文献类型：
--
作者：
K. Kamada;T. Nawata;Y. Inui;H. Yanagi;Hiroki Sato;A. Yoshikawa;M. Nikl;T. Fukuda
本文采用电阻加热和绝热的方法，对提拉法生长8英寸BaF_2单晶的生长条件进行了优化。生长的晶体无色透明，直径205 mm，长90 mm。双折射率径向变化为8.7nm/cm。生长的BaF_2单晶在200 nm波长范围内具有良好的透过率（>80%）和0.60-0.63ns的超快衰减时间。这些特性表明8英寸的高潜力。采用提拉法生长的BaF_2单晶，用于TOF-PET。
In this work we optimize the growth condition of 8 inch size BaF2single crystal which could be grown by the Czochralski (Cz) method with the resistive heating system and thermal insulators. Grown crystals were colorless transparent with 205mm in diameter, 90mm in length. The variation of the birefringence in the radial direction was 8.7nm/cm. Grown BaF2single crystals show good transmittance (>80%) over 200nm wavelength and super fast decay time of 0.60–0.63ns. These characteristics indicate the high potential of 8-in. size BaF2 single crystal grown by the Cz method for TOF-PET.