Electroforming-free resistive switching memory effect in transparent p-type tin monoxide
Electroforming-free resistive switching memory effect in transparent p-type tin monoxide
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DOI：
10.1063/1.4870405
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发表时间：
2014-04
影响因子：
4
通讯作者：
M. K. Hota;J. A. Caraveo-Frescas;M. McLachlan;H. Alshareef
中科院分区：
文献类型：
--
作者：
M. K. Hota;J. A. Caraveo-Frescas;M. McLachlan;H. Alshareef
我们报告可重复的低偏置双极电阻开关行为的p型氧化锡薄膜器件，而无需额外的电铸步骤。实验结果表明，该器件电阻比稳定在100倍以上，开关循环性能可达180次，数据保持时间大于103 s。导电机制根据所施加的电压范围和器件的电阻状态而变化。示出的忆阻开关起源于Al/SnO界面处的氧化还原现象，以及随后的导电细丝在SnO层的本体中的形成/破裂，可能涉及氧空位和Sn杂质。
We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 103 s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials.